Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe
Identifieur interne : 000105 ( Main/Exploration ); précédent : 000104; suivant : 000106Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe
Auteurs : RBID : ISTEX:11664_1995_Article_BF02676846.pdfEnglish descriptors
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Abstract
The performance of infrared detectors made from CdxHg1-xTe (CMT) is related to the lifetime of minority carriers in the material. Both photoconductive and photovoltaic devices require long lifetimes for high performance. This paper compares lifetime measurements on epitaxially grown CMT layers which have been isothermally annealed to minimize the vacancy concentration and are n-type due to native defects, residual impurities, or deliberately added dopants. Layers grown by liquid phase epitaxy (LPE), metalorganic vapor phase epitaxy (MOVPE), and molecular beam epitaxy (MBE) have been considered, in all cases the same measurement system was used under the same low injection conditions. All layers were of compositions required for operation in the 8 to 14 μm wavelength range. Comparisons have been made between undoped and indium doped LPE layers and undoped and iodine doped MOVPE layers. It was hoped that a deliberately introduced donor impurity would give better control of the n-type properties. The effect of passivation on the measurement of lifetime has also been considered, the results showing that a surface with a native oxide is required to obtain the true bulk lifetime as has been seen previously for bulk material.
DOI: 10.1007/BF02676846
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Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</mods:affiliation><country>Royaume-Uni</country><placeName><region type="country">Angleterre</region></placeName><wicri:cityArea>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton</wicri:cityArea></affiliation></author><author><name>C. L. Jones</name><affiliation wicri:level="2"><mods:affiliation>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</mods:affiliation><country>Royaume-Uni</country><placeName><region type="country">Angleterre</region></placeName><wicri:cityArea>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton</wicri:cityArea></affiliation></author><author><name>N. Metcalfe</name><affiliation wicri:level="2"><mods:affiliation>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</mods:affiliation><country>Royaume-Uni</country><placeName><region type="country">Angleterre</region></placeName><wicri:cityArea>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1995_Article_BF02676846.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF02676846</idno><idno type="wicri:Area/Main/Corpus">000877</idno><idno type="wicri:Area/Main/Curation">000877</idno><idno type="wicri:Area/Main/Exploration">000105</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CdxHg1-xTe (CMT)</term><term>Epitaxial</term><term>Lifetime</term><term>N-type</term><term>Passivation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The performance of infrared detectors made from CdxHg1-xTe (CMT) is related to the lifetime of minority carriers in the material. Both photoconductive and photovoltaic devices require long lifetimes for high performance. This paper compares lifetime measurements on epitaxially grown CMT layers which have been isothermally annealed to minimize the vacancy concentration and are n-type due to native defects, residual impurities, or deliberately added dopants. Layers grown by liquid phase epitaxy (LPE), metalorganic vapor phase epitaxy (MOVPE), and molecular beam epitaxy (MBE) have been considered, in all cases the same measurement system was used under the same low injection conditions. All layers were of compositions required for operation in the 8 to 14 μm wavelength range. Comparisons have been made between undoped and indium doped LPE layers and undoped and iodine doped MOVPE layers. It was hoped that a deliberately introduced donor impurity would give better control of the n-type properties. The effect of passivation on the measurement of lifetime has also been considered, the results showing that a surface with a native oxide is required to obtain the true bulk lifetime as has been seen previously for bulk material.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="9928a6bd95ec9305f6d6551b0c2e290a44db1db9"><titleInfo lang="eng"><title>Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe</title></titleInfo><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Barton</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</affiliation></name><name type="personal"><namePart type="given">D.</namePart><namePart type="family">Dutton</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</affiliation></name><name type="personal"><namePart type="given">P.</namePart><namePart type="family">Capper</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</affiliation></name><name type="personal"><namePart type="given">C. L.</namePart><namePart type="family">Jones</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</affiliation></name><name type="personal"><namePart type="given">N.</namePart><namePart type="family">Metcalfe</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>G.E.C. Marconi Infrared Ltd., P.O. Box 217, S015 OEG, Southampton, England</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1995-04-19</dateCreated><dateValid encoding="w3cdtf">2007-07-14</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The performance of infrared detectors made from CdxHg1-xTe (CMT) is related to the lifetime of minority carriers in the material. Both photoconductive and photovoltaic devices require long lifetimes for high performance. This paper compares lifetime measurements on epitaxially grown CMT layers which have been isothermally annealed to minimize the vacancy concentration and are n-type due to native defects, residual impurities, or deliberately added dopants. Layers grown by liquid phase epitaxy (LPE), metalorganic vapor phase epitaxy (MOVPE), and molecular beam epitaxy (MBE) have been considered, in all cases the same measurement system was used under the same low injection conditions. All layers were of compositions required for operation in the 8 to 14 μm wavelength range. Comparisons have been made between undoped and indium doped LPE layers and undoped and iodine doped MOVPE layers. It was hoped that a deliberately introduced donor impurity would give better control of the n-type properties. The effect of passivation on the measurement of lifetime has also been considered, the results showing that a surface with a native oxide is required to obtain the true bulk lifetime as has been seen previously for bulk material.</abstract><subject lang="eng"><genre>Key words</genre><topic>CdxHg1-xTe (CMT)</topic><topic>epitaxial</topic><topic>lifetime</topic><topic>passivation</topic><topic>n-type</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 24</partNumber><partNumber>Number: 11</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-11-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 45</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02676846</identifier><identifier type="matrixNumber">Art44</identifier><identifier type="local">BF02676846</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1759</start><end>1764</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin><recordIdentifier>11664_1995_Article_BF02676846.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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